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| HSG2004 SiGe HBT High Frequency Medium Power Amplifier REJ03G0484-0400 Rev.4.00 Jun 21, 2006 Features * High Transition Frequency fT = 30 GHz typ. * Low Distortion and Excellent Linearity P1dB at output = +14.5 dBm typ. f = 5.8 GHz * High Collector to Emitter Voltage VCEO = 5 V * Ideal for 2 GHz, 5 GHz Band applications. e.g. WLAN, Digital cordless phone. Outline Renesas Package code: PWQN0008ZA-A (Package name: HWQFN-8 9 4 4 5 6 7 5 76 9 200 4 8 3 12 3 2 1 8 1. Collector 2. Collector 3. Collector 4. Emitter 5. Emitter 6. Base 7. Emitter 8. Emitter 9. Emitter Note: Marking is "2004". Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Value on PCB (40 x 40 x 1.0 mm) Symbol VCBO VCEO VEBO IC Pc Tj Tstg Ratings 12 5 1.2 200 1Note 150 -55 to +150 Unit V V V mA W C C Rev.4.00 Jun 21, 2006 page 1 of 12 HSG2004 Electrical Characteristics (Ta = 25C) Item DC current transfer ratio Reverse Transfer Capacitance Symbol hFE Cre fT MSG MAG MAG PG P1dB Po(sat) Min 170 14 Typ 240 30.0 15.5 21 12 11.5 +14.5 +22 Max 320 0.6 Unit pF GHz dB dB dB dB dBm dBm Test Conditions VCE = 3 V, IC = 30 mA VCB = 3 V, IE = 0, f = 1 MHz, emitter grounded VCE = 3 V, IC = 30 mA, f = 1 GHz VCE = 3 V, IC = 30 mA, f = 5.8 GHz VCE = 3 V, IC = 30 mA, f = 2.4 GHz VCE = 3 V, IC = 30 mA, f = 5.8 GHz VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz, Pin = +0 dBm VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz VCE = 3.6 V, Iidle = 30 mA, f = 5.8 GHz, Pin = +0 dBm Transition Frequency Maximum Stable Gain Maximum Available Gain Maximum Available Gain Power Gain 1dB Compression Point at output Saturation Output Power Main Characteristics Collector Power Dissipation Curve Collector Power Dissipation Pc* (mW) 1500 *(4 x 4 x 1mm) on PCB 1000 500 0 50 100 150 200 Ambient Temperature Ta (C) Rev.4.00 Jun 21, 2006 page 2 of 12 HSG2004 DC Current Transfer Ratio vs. Collector Current hFE (-) 400 VCE = 3 V 300 Typical Transfer Characteristics 100 IC (mA) VCE = 3 V 80 Collector Current 60 DC Current Transfer Ratio 0.2 0.4 0.6 0.8 1.0 200 40 100 20 0 1 10 100 0 Base to Emitter Voltage VBE (V) Collector Current IC (mA) Reverse Transfer Capacitanse Cre (pF) Reverse Transfer Capacitanse vs. Collector to Base Voltage 0.5 40 Transition Frequency vs. Collector Current Transition Frequency fT (GHz) VCE = 3 V f = 1 GHz 30 IE = 0 f = 1 MHz 0.4 0.3 20 0.2 10 0.1 0 1 2 3 4 0 1 10 100 1000 Collector to Base Voltage VCB (V) Collector Current IC (mA) Maximum Stable Gain, Maximum Available Gain vs. Collector Current Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) S21 Parameter |S21|2 (dB) Maximum Stable Gain MSG (dB) Maximum Available Gain MAG (dB) 30 25 20 15 10 5 0 1 10 100 1000 5.2 GHz 5.8 GHz 1.8 GHz 2.4 GHz VCE = 3 V MAG MSG S21 Parameter, Maximum Available Gain, Maximum Stable Gain vs. Frequency 40 MSG 30 f = 1 GHz 20 |S21|2 10 VCE = 3 V IC = 30 mA 0 0.1 1 10 MAG Collector Current IC (mA) Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 3 of 12 HSG2004 2.4 GHz Characteristics Evaluation Board Circuit VBB:Bias Control *1 F 1000 pF 10 pF R : 27 10 pF 1000 pF *1 F VCC L : 5.6 nH C : 1 pF IN L : 1.5 nH L : 10 nH C : 2 pF OUT L : 1.8 nH C : 0.9 pF C : 1 to 2 pF Pin - Pout Characteristics Pin - Pout Characteristics 25 3rd. Order Intermodulation Distortion (IMD3) 300 40 30 VCE = 3.6 V Iidle = 30 mA f = 2.4 GHz Fundamental (1tone) IMD3 (2tone: f = 1MHz) Output Power Pout (dBm) Power Gain PG (dB) 20 15 10 5 VCC = 3.6 V Iidle = 30 mA f = 2.4 GHz Pout PG 250 Pout / IMD3 (dBm) 20 10 0 -10 -20 -30 200 150 100 Iop 0 -5 -20 50 -40 -10 0 0 10 -50 -60 -40 -20 0 20 40 Iop (mA) Input Power Pin (dBm) Input Power Pin (dBm) S parameter vs. Frequency 20 10 S21 VCE = 3.6 V IC = 30 mA 20 10 S parameter vs. Frequency VCE = 3.6 V IC = 40 mA S21 S parameter (dB) 0 -10 -20 -30 -40 1.0 S11 S parameter (dB) 0 -10 S22 -20 -30 -40 1.0 S11 S22 S12 1.5 2.0 2.5 3.0 3.5 4.0 S12 1.5 2.0 2.5 3.0 3.5 4.0 Frequency f (GHz) Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 4 of 12 HSG2004 5.8 GHz Characteristics Evaluation Board Circuit VBB:Bias Control *1 F 1000 pF 10 pF 20 2 pF 10 pF 1000 pF 2 pF *1 F VCC 0.5 pF 0.3 pF IN 0.5 pF 0.5 pF OUT Pin - Pout Characteristics Pin - Pout Characteristics 25 250 VCC = 3.6 V Iidle = 30 mA f = 5.8 GHz Pout Iop 10 PG 5 50 100 3rd. Order Intermodulation Distortion (IMD3) 40 VCE = 3.6 V Iidle = 30 mA f = 5.8 GHz Output Power Pout (dBm) Power Gain PG (dB) 20 200 20 Pout / IMD3 (dBm) Iop (mA) 15 150 0 Fundamental (1tone) -20 IMD3 (2tone:f = 1MHz) -40 0 -20 -10 0 10 0 20 -60 -60 -40 -20 0 20 40 Input Power Pin (dBm) Input Power Pin (dBm) S parameter vs. Frequency 20 VCE = 3.6 V IC = 30 mA 10 S21 10 20 S parameter vs. Frequency VCE = 3.6 V IC = 40 mA S21 S parameter (dB) S parameter (dB) 0 S11 0 S11 S22 -10 S22 -20 S12 -30 4 5 6 7 8 -10 -20 S12 -30 4 5 6 7 8 Frequency f (GHz) Frequency f (GHz) Rev.4.00 Jun 21, 2006 page 5 of 12 HSG2004 S21 Parameter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 14 / div. 60 -150 -30 Condition: VCE = 3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90 120 60 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 6 of 12 HSG2004 S21 Parameter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 14 / div. 60 -150 -30 Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90 120 60 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.3 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 7 of 12 HSG2004 S21 Parameter vs. Frequency 90 2 .4 3 .2 4 5 10 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -3 -.4 -.6 -.8 -1.5 -2 -120 -90 -60 -1 -5 -4 180 0 150 30 120 S11 Parameter vs. Frequency .8 .6 1 1.5 Scale: 14 / div. 60 -150 -30 Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) S12 Parameter vs. Frequency Scale: 0.04 / div. 90 120 60 S22 Parameter vs. Frequency .8 .6 .4 3 1 1.5 2 150 30 .2 4 5 10 180 0 0 .2 .4 .6 .8 1 1.5 2 3 45 10 -10 -.2 -150 -30 -3 -.4 -120 -90 -60 -.6 -.8 -1.5 -2 -1 -5 -4 Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Condition: VCE = 3.6 V, IC = 30 mA, Zo = 50 100 to 3000 MHz (100 MHz Step) 3200 to 6000 MHz (200 MHz Step) Rev.4.00 Jun 21, 2006 page 8 of 12 HSG2004 S parameter (VCE = 3 V, IC = 30 mA, Zo = 50 ) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.684 0.708 0.664 0.644 0.638 0.640 0.640 0.640 0.641 0.641 0.644 0.648 0.649 0.651 0.651 0.656 0.660 0.665 0.667 0.668 0.669 0.673 0.678 0.683 0.687 0.687 0.688 0.689 0.693 0.698 0.702 0.703 0.709 0.712 0.715 0.723 0.726 0.730 0.742 0.747 0.753 0.765 0.773 0.779 0.790 S11 ANG (deg.) -61.3 -53.6 -81.8 -105.0 -121.4 -134.8 -143.6 -150.6 -156.5 -161.6 -166.1 -169.8 -173.1 -176.2 -179.2 177.9 175.5 173.5 171.5 169.3 167.1 164.9 163.1 161.5 160.0 158.2 156.4 154.5 152.9 151.5 148.6 145.0 142.1 139.0 135.4 132.3 129.2 125.4 122.4 119.4 115.9 113.0 110.3 106.9 104.5 MAG 47.90 39.45 35.97 32.90 29.04 25.80 22.83 20.30 18.23 16.44 15.00 13.75 12.70 11.78 10.97 10.23 9.58 9.01 8.52 8.08 7.65 7.27 6.92 6.61 6.32 6.05 5.80 5.57 5.35 5.16 4.80 4.48 4.19 3.95 3.72 3.51 3.33 3.14 2.98 2.84 2.69 2.55 2.43 2.30 2.18 S21 ANG (deg.) 147.5 142.1 128.9 117.8 109.5 102.8 97.7 93.4 89.8 86.5 83.6 80.9 78.4 76.0 73.9 71.8 69.9 68.0 66.1 64.1 62.4 60.7 59.2 57.6 55.9 54.2 52.5 50.9 49.5 48.2 45.0 41.8 39.0 36.0 32.7 29.9 27.0 23.7 20.8 17.8 14.5 11.5 8.4 5.3 2.2 MAG 0.0103 0.0168 0.0180 0.0192 0.0214 0.0225 0.0240 0.0238 0.0242 0.0249 0.0250 0.0252 0.0258 0.0262 0.0263 0.0270 0.0274 0.0282 0.0285 0.0294 0.0297 0.0304 0.0310 0.0318 0.0327 0.0337 0.0339 0.0348 0.0359 0.0364 0.0381 0.0399 0.0418 0.0436 0.0453 0.0477 0.0489 0.0511 0.0531 0.0555 0.0571 0.0592 0.0612 0.0628 0.0643 S12 ANG (deg.) 39.8 50.5 41.9 36.7 34.3 31.8 29.2 28.5 30.5 30.4 27.9 29.1 29.4 29.7 30.7 32.4 33.0 33.6 34.5 34.3 35.2 35.9 36.5 37.7 38.0 37.6 38.8 38.8 39.4 39.9 40.5 40.5 40.7 40.1 39.9 39.2 39.3 38.3 37.1 36.5 35.1 33.4 31.6 30.0 28.2 MAG 1.006 0.811 0.685 0.601 0.543 0.505 0.480 0.460 0.447 0.437 0.431 0.427 0.425 0.423 0.423 0.424 0.425 0.427 0.429 0.432 0.435 0.438 0.441 0.444 0.448 0.450 0.454 0.457 0.460 0.463 0.468 0.473 0.477 0.480 0.483 0.485 0.487 0.490 0.493 0.497 0.503 0.509 0.517 0.525 0.534 S22 ANG (deg.) -19.0 -53.9 -71.2 -84.9 -94.8 -102.7 -109.5 -115.0 -119.7 -123.8 -127.3 -130.2 -132.7 -134.9 -136.9 -138.7 -140.3 -141.7 -143.0 -144.1 -145.2 -146.2 -147.3 -148.0 -148.9 -149.6 -150.3 -150.9 -151.6 -152.2 -153.4 -154.6 -156.0 -157.3 -158.9 -160.6 -162.5 -164.8 -167.0 -169.5 -172.1 -174.9 -177.8 179.3 176.2 Rev.4.00 Jun 21, 2006 page 9 of 12 HSG2004 S parameter (VCE = 3.3 V, IC = 30 mA, Zo = 50 ) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.674 0.708 0.668 0.646 0.637 0.638 0.640 0.639 0.639 0.639 0.643 0.647 0.648 0.649 0.650 0.653 0.658 0.663 0.665 0.667 0.667 0.671 0.676 0.682 0.685 0.685 0.687 0.688 0.692 0.696 0.701 0.702 0.708 0.710 0.714 0.722 0.724 0.729 0.740 0.746 0.752 0.764 0.773 0.778 0.789 S11 ANG (deg.) -60.3 -53.6 -81.6 -104.3 -121.1 -134.3 -143.1 -150.2 -156.1 -161.2 -165.7 -169.5 -172.8 -175.9 -178.9 178.2 175.8 173.7 171.7 169.5 167.3 165.1 163.3 161.6 160.1 158.4 156.5 154.7 153.1 151.6 148.7 145.2 142.3 139.2 135.5 132.4 129.4 125.5 122.4 119.5 115.9 113.1 110.4 107.0 104.5 MAG 48.82 40.51 36.68 33.30 29.33 26.04 23.01 20.48 18.38 16.56 15.11 13.85 12.80 11.87 11.05 10.31 9.66 9.08 8.58 8.14 7.71 7.33 6.97 6.66 6.36 6.10 5.85 5.61 5.39 5.19 4.84 4.51 4.22 3.98 3.75 3.54 3.35 3.17 3.01 2.86 2.71 2.57 2.45 2.32 2.19 S21 ANG (deg.) 147.33 141.98 128.82 117.87 109.63 102.93 97.82 93.51 89.85 86.63 83.71 80.95 78.44 76.09 73.89 71.81 69.89 67.99 66.10 64.14 62.39 60.67 59.20 57.56 55.90 54.14 52.44 50.90 49.52 48.15 44.97 41.72 39.02 35.99 32.71 29.88 26.99 23.61 20.69 17.76 14.45 11.42 8.38 5.20 2.09 MAG 0.0124 0.0146 0.0189 0.0211 0.0216 0.0229 0.0234 0.0239 0.0244 0.0247 0.0248 0.0252 0.0259 0.0258 0.0269 0.0273 0.0276 0.0281 0.0288 0.0294 0.0297 0.0305 0.0311 0.0318 0.0322 0.0337 0.0342 0.0348 0.0355 0.0361 0.0380 0.0397 0.0414 0.0437 0.0458 0.0477 0.0490 0.0509 0.0530 0.0554 0.0573 0.0592 0.0614 0.0623 0.0639 S12 ANG (deg.) 106.4 57.5 39.9 42.3 34.1 32.8 31.7 29.8 30.0 28.7 29.6 27.6 30.7 30.7 31.0 32.5 31.8 33.4 34.3 35.0 35.5 35.8 36.7 37.6 37.5 39.1 38.8 39.2 39.3 39.5 40.5 40.5 40.1 41.0 40.5 39.9 38.8 38.5 37.5 36.7 35.6 33.8 31.9 30.6 28.1 MAG 0.755 0.814 0.690 0.598 0.544 0.506 0.480 0.460 0.448 0.436 0.431 0.426 0.424 0.422 0.422 0.423 0.424 0.426 0.428 0.431 0.434 0.437 0.440 0.443 0.447 0.450 0.453 0.456 0.459 0.462 0.467 0.472 0.476 0.479 0.483 0.484 0.487 0.489 0.493 0.497 0.502 0.509 0.516 0.524 0.534 S22 ANG (deg.) -22.6 -53.5 -70.4 -83.9 -94.1 -102.0 -108.7 -114.2 -119.1 -123.2 -126.6 -129.5 -132.0 -134.3 -136.4 -138.2 -139.8 -141.2 -142.5 -143.6 -144.8 -145.7 -146.7 -147.6 -148.4 -149.2 -149.8 -150.6 -151.2 -151.8 -153.0 -154.2 -155.6 -156.9 -158.5 -160.3 -162.2 -164.4 -166.7 -169.1 -171.7 -174.6 -177.5 179.6 176.6 Rev.4.00 Jun 21, 2006 page 10 of 12 HSG2004 S parameter (VCE = 3.6 V, IC = 30 mA, Zo = 50 ) f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 3200 3400 3600 3800 4000 4200 4400 4600 4800 5000 5200 5400 5600 5800 6000 MAG 0.686 0.713 0.669 0.645 0.637 0.638 0.638 0.637 0.638 0.638 0.642 0.645 0.645 0.648 0.648 0.652 0.657 0.662 0.664 0.665 0.666 0.670 0.675 0.680 0.684 0.683 0.684 0.686 0.691 0.695 0.700 0.700 0.706 0.709 0.713 0.721 0.723 0.728 0.739 0.745 0.751 0.762 0.771 0.777 0.788 S11 ANG (deg.) -60.1 -53.6 -81.1 -103.8 -120.5 -133.6 -142.5 -149.7 -155.6 -160.8 -165.3 -169.1 -172.4 -175.6 -178.6 178.5 176.1 174.0 171.9 169.8 167.5 165.3 163.5 161.9 160.4 158.7 156.8 154.9 153.2 151.8 148.9 145.3 142.4 139.3 135.6 132.6 129.5 125.6 122.6 119.7 116.1 113.2 110.4 107.1 104.7 MAG 49.50 41.32 37.11 33.55 29.52 26.17 23.13 20.59 18.47 16.65 15.20 13.93 12.87 11.94 11.11 10.37 9.71 9.13 8.62 8.18 7.75 7.37 7.01 6.69 6.40 6.13 5.88 5.64 5.42 5.22 4.86 4.53 4.24 4.00 3.77 3.56 3.37 3.18 3.02 2.87 2.72 2.58 2.46 2.33 2.21 S21 ANG (deg.) 147.35 141.93 128.90 118.06 109.81 103.15 98.02 93.66 90.02 86.77 83.83 81.07 78.55 76.19 73.98 71.89 69.97 68.06 66.16 64.18 62.44 60.71 59.24 57.59 55.92 54.16 52.46 50.91 49.54 48.16 44.99 41.72 39.01 36.00 32.71 29.88 26.99 23.59 20.67 17.72 14.42 11.39 8.34 5.17 2.04 MAG 0.0070 0.0155 0.0200 0.0199 0.0221 0.0222 0.0238 0.0239 0.0243 0.0245 0.0251 0.0256 0.0253 0.0263 0.0268 0.0271 0.0274 0.0279 0.0287 0.0292 0.0298 0.0306 0.0310 0.0316 0.0322 0.0335 0.0338 0.0345 0.0349 0.0364 0.0383 0.0399 0.0420 0.0430 0.0452 0.0471 0.0489 0.0510 0.0527 0.0551 0.0573 0.0590 0.0610 0.0624 0.0638 S12 ANG (deg.) 30.5 53.8 42.6 37.3 34.8 31.6 30.5 28.3 28.8 29.0 29.2 29.2 30.2 30.9 30.6 32.1 32.5 33.0 33.5 34.2 34.7 35.9 36.8 36.8 37.7 38.0 39.0 39.3 39.4 39.8 40.4 40.5 40.3 40.9 40.3 40.2 39.2 38.4 37.6 36.4 35.6 33.7 32.0 30.4 28.5 MAG 0.897 0.815 0.690 0.605 0.546 0.507 0.481 0.461 0.447 0.437 0.431 0.427 0.424 0.423 0.422 0.423 0.424 0.426 0.428 0.431 0.433 0.436 0.439 0.443 0.446 0.450 0.453 0.455 0.459 0.462 0.467 0.472 0.476 0.479 0.482 0.485 0.487 0.489 0.492 0.496 0.502 0.509 0.516 0.524 0.533 S22 ANG (deg.) -21.2 -52.9 -69.6 -83.3 -93.3 -101.4 -108.1 -113.7 -118.4 -122.5 -125.9 -129.0 -131.4 -133.8 -135.8 -137.7 -139.3 -140.7 -142.1 -143.2 -144.3 -145.4 -146.3 -147.1 -148.0 -148.8 -149.5 -150.1 -150.8 -151.4 -152.5 -153.9 -155.2 -156.6 -158.1 -159.9 -161.8 -164.0 -166.4 -168.8 -171.4 -174.3 -177.2 179.8 176.8 Rev.4.00 Jun 21, 2006 page 11 of 12 HSG2004 Package Dimensions Package Name HWQFN-8 JEITA Package Code P-HWQFN8-2x2-0.65 RENESAS Code PWQN0008ZA-A Previous Code TNP-8TV MASS[Typ.] 0.009g B 7 D 6 5 A 5 b 6 x MS A 7 B 0.90 Lp 8 4 4 C0.15 8 1 2 ZE 3 ZD y1 S 3 2 e 1 Reference Symbol 0.05 0.60 E Dimension in Millimeters S S A1 y D E A A1 A2 b e Lp x y y1 ZD ZE Min 1.965 1.965 0 Nom 2.00 2.00 Max 2.075 2.075 0.80 0.05 A 0.3 0.65 0.35 0.10 0.08 0.10 0.350 0.225 Ordering Information Part Name HSG2004TB-E Quantity 2000 pcs. Shipping Container 178 mm Reel, 8 mm Emboss Taping Note: Therefore especially small contact area of terminal, miss contact may occur if inadequate soldering condition is applied. Contact Renesas sales office for any question regarding recommended soldering condition of Renesas. Rev.4.00 Jun 21, 2006 page 12 of 12 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein. RENESAS SALES OFFICES Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology (Shanghai) Co., Ltd. Unit 204, 205, AZIACenter, No.1233 Lujiazui Ring Rd, Pudong District, Shanghai, China 200120 Tel: <86> (21) 5877-1818, Fax: <86> (21) 6887-7898 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> (2) 796-3115, Fax: <82> (2) 796-2145 http://www.renesas.com Renesas Technology Malaysia Sdn. Bhd Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510 (c) 2006. Renesas Technology Corp., All rights reserved. Printed in Japan. Colophon .6.0 |
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